对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRFP054N-205 | Infineon Technologies AG | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP2907Z | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3 | - | |||||
AD | IRF6644TRPBF | Infineon Technologies | MOSFET/FET,IRF6644 - 12V-300V N-Channel Power MOSFET | |||||
IRFP044N-206 | Infineon Technologies AG | Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP064N-201PBF | Infineon Technologies AG | 110A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFP343 | Infineon Technologies AG | Power Field-Effect Transistor, 8.7A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | - | |||||
IRFP048N-203PBF | Infineon Technologies AG | 64A, 55V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFP064N-208PBF | Infineon Technologies AG | 110A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET | - | |||||
IRFPS59N60CPBF | Infineon Technologies AG | Power Field-Effect Transistor, 59A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN | - | |||||
IRFP044N-208 | Infineon Technologies AG | Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP064N-202 | Infineon Technologies AG | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP362PBF | Infineon Technologies AG | 20A, 400V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | - | |||||
IRFPF52PBF | Infineon Technologies AG | 6.2A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | - | |||||
IRFP044N-202 | Infineon Technologies AG | Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
IRFP7537PBF | Infineon Technologies AG | Power Field-Effect Transistor, | ¥19.0157 | |||||
IRFP7718PBF | Infineon Technologies AG | Power Field-Effect Transistor, 195A I(D), 75V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | ¥49.0682 | |||||
IRFP3710 | Infineon Technologies AG | Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | - | |||||
IRFP1405 | Infineon Technologies AG | Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | - | |||||
IRFP150N | Infineon Technologies AG | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | - | |||||
IRFP90N20D | Infineon Technologies AG | Power Field-Effect Transistor, 94A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | - | |||||
IRFP9140N | Infineon Technologies AG | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | - |